Datasheet4U Logo Datasheet4U.com

2SD2558 - NPN Transistor

📥 Download Datasheet

Preview of 2SD2558 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD2558
Manufacturer INCHANGE
File Size 212.59 KB
Description NPN Transistor
Datasheet download datasheet 2SD2558-INCHANGE.pdf

2SD2558 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-

📁 2SD2558 Similar Datasheet

  • 2SD2556 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2500 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2504 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SD250A - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD2524 - Power Transistor (Inchange Semiconductor)
  • 2SD2525 - Silicon NPN Triple Diffused Type Transistor (Toshiba)
  • 2SD2526 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2527 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE
Published: |