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2SD1987 - NPN Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.
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