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2SD1893 - NPN Transistor

Description

High DC Current Gain- : hFE= 5000(Min)@IC= 5A Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 5A Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications

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isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 5A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 5A ·Complement to Type 2SB1253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 50 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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