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2SD1845 - Silicon NPN Power Transistor

Description

Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications .

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isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 7 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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