Datasheet4U Logo Datasheet4U.com

2SD1790 - NPN Transistor

Description

Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

speed high current switching industrial use.

📥 Download Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 50-70 V VCBO Collector-Base Voltage 50-70 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continunous 0.3 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.
Published: |