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2SD1773 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V Complement to Type 2SB1193 Minimum Lot-to-Lot variations for robust device performance an

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Complement to Type 2SB1193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed switching applications.
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