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2SD1678 - NPN Transistor

Description

High DC Current Gain-hFE= 750(Min)@ IC= 15A High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 15A ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS (T aB B =25 ℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 3.
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