Datasheet4U Logo Datasheet4U.com

2SD1666 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general

📥 Download Datasheet

📁 Similar Datasheet

  • 2SD1666 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1662 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1662 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1663 - Power Transistor (Inchange Semiconductor)
  • 2SD1664 - Medium Power Transistor (Rohm)
  • 2SD1664 - 1A Medium Power Silicon Transistor (FASTSTAR SEMICONDUCTOR)
  • 2SD1664 - MEDIUM POWER NPN TRANSISTOR (UTC)
  • 2SD1664 - NPN Silicon General Purpose Transistor (SeCoS)
  • 2SD1664 - NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR (AiT Semiconductor)
  • 2SD1664-HF - NPN Transistors (Kexin)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 2 W 25 150 ℃ Tstg Storage Temperature -40~150 ℃ 2SD1666 isc website：www.iscsemi.
Published: |