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2SD1551 - NPN Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Color TV horizontal output applications.

Switching regulator output applications.

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isc Silicon NPN Power Transistor isc Product Specification 2SD1551 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications. ·Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
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