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2SD1505 - NPN Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A Wide Area of Safe Operation Complement to Type 2SB1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1064 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1505 isc website：www.iscsemi.
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