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2SD1459 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Wide Area of Safe Operation Complement to Type 2SB1037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications

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isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1037 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 30 W 2 175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.
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