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2SD1294 - NPN Transistor

Description

Included Avalanche Diode- : VZ= 60±15V High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power regulator for line operated TV applications.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60±15 V VCEO Collector-Emitter Voltage 60±15 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1294 isc website：www.iscsemi.
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