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2SD1180 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifie

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1180 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 1.
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