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2SD1158 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain- : hFE= 250V(Min.) @IC= 1A Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operati APPLICATIONS Switching regulators

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isc Silicon NPN Power Transistor 2SD1158 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.
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