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2SC4883A - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SA1859A 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4883A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA1859A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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