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2SC4881 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 8 A IB Base Current-Continuous 1 A Total Power Dissipation @TC=25℃ 20 PT W Total Power Dissipation @Ta=25℃ 2.
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