Datasheet4U Logo Datasheet4U.com

2SC4124 - NPN Transistor

Description

High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output appli

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC4124 - NPN Transistor (Sanyo Semicon Device)
  • 2SC4124 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4121 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4123 - NPN Transistor (Sanyo Semicon Device)
  • 2SC4123 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4125 - NPN Transistor (Sanyo Semicon Device)
  • 2SC4126 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC4100 - NPN Silicon Transistor (ROHM)
  • 2SC4102 - Silicon Transistor (GME)
  • 2SC4102 - High-voltage Amplifier Transistor (Rohm)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 3.0 W 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4124 isc website：www.iscsemi.
Published: |