Datasheet4U Logo Datasheet4U.com

2SC3854 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) Good Linearity of hFE Complement to Type 2SA1490 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=2

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC3854 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3850 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3851 - Silicon NPN Transistor (Sanken electric)
  • 2SC3851 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3851A - Silicon NPN Transistor (Sanken electric)
  • 2SC3851A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3852 - Silicon NPN Transistor (Sanken electric)
  • 2SC3852 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC3852 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3852A - Silicon NPN Transistor (Sanken electric)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3854 isc website：www.iscsemi.
Published: |