2SC3831 - NPN Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator an

Inchange Semiconductor

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Datasheet Details

Part number	2SC3831
Manufacturer	Inchange Semiconductor
File Size	209.06 KB
Description	NPN Transistor
Datasheet	2SC3831 Datasheet

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

Published: Sep 20, 2020 |