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2SC2830 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-vol

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isc Silicon NPN Power Transistor 2SC2830 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching applications such as switching regulators, inverters, solenoid and relay drivers.
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