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2SC2768 - NPN Transistor

Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency invert

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isc Silicon NPN Power Transistor 2SC2768 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VCEO(SUS) Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
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