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2SC2712 - NPN Transistor

Description

With SOT-23 packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME

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isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2712 isc website：www.iscsemi.
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