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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
Pc
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2552
isc website：www.iscsemi.
2SC2552 Datasheet
