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2SC1046 - NPN Transistor

Description

With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 1000 V 400 V 6 V 3.0 A 0.1 A 25 W 125 ℃ -40~125 ℃ isc website：www.iscsemi.
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