Datasheet Details
| Part number | 2SB681 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 204.10 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB681-INCHANGE.pdf
|
| Part number | 2SB681 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 204.10 KB |
| Description | PNP Transistor |
| Datasheet |
2SB681-INCHANGE.pdf
|
High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier use. Recommended for use in output stage of 80 watts power amplifier .ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Cur
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