Datasheet Details
| Part number | 2SB507 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 217.02 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB507-INCHANGE.pdf
|
| Part number | 2SB507 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 217.02 KB |
| Description | PNP Transistor |
| Datasheet |
2SB507-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO E
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