Datasheet4U Logo Datasheet4U.com

2SB507 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB507 Silicon PNP Power Transistors SavantIC
2SB507 PNP Epitaxial Silicon Transistor GME
2SB507 PNP Transistor DC COMPONENTS
2SB507 PNP Transistor Hottech
2SB502A SILICON PNP TRANSISTOR Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB502 PNP Transistor
2SB503 PNP Transistor
2SB506 PNP Transistor
2SB508 PNP Transistor
2SB511 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor 2SB507 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6.
Published: |