Datasheet4U Logo Datasheet4U.com

2SB1315 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type 2SD1977 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-55

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1315 SILICON POWER TRANSISTOR SavantIC
2SB1314 Silicon PNP Transistor ETC
2SB1316 Power Transistor Rohm
2SB1316 Silicon PNP Power Transistor Inchange Semiconductor
2SB1317 Silicon PNP Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1317 PNP Transistor
2SB1334 PNP Transistor
2SB1335 PNP Transistor
2SB1339 PNP Transistor
2SB1341 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1977 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-55W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 3.
Published: |