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2SB1075 - PNP Transistor

Description

High Collector Current -IC= -2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1075 isc website：www.iscsemi.
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