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2SB1063 - PNP Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplific

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1063 isc website：www.iscsemi.
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