Datasheet4U Logo Datasheet4U.com

2SA2004 - PNP Transistor

Description

Silicon PNP epitaxial planner type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

📥 Download Datasheet

Datasheet preview – 2SA2004

📁 Similar Datasheet

  • 2SA2004 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SA2002 - Silicon PNP Epitaxial Type Transistor (IDC)
  • 2SA2005 - Transistors (Rohm)
  • 2SA2006 - High-speed Switching Transistor (ROHM)
  • 2SA2009 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA201 - PNP transistor (ETC)
  • 2SA2010 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA2011 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA2012 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA2012 - Bipolar Transistor (ON Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004 DESCRIPTION ·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
Published: |