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2SA1295 PNP Transistor

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Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min). Good Linearity of hFE. Complement to Type 2SC3264. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number
2SA1295
Manufacturer
INCHANGE
File Size
216.85 KB
Datasheet
2SA1295-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-

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