Datasheet4U Logo Datasheet4U.com

2N6284 - NPN Transistor

Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC =10 Adc Collector-Emitter Sustaining Voltage- VCEO(SUS)=100V(Min) Complement to type 2N6287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

📁 Similar Datasheet

  • 2N6284 - Complementary power Darlington transistors (STMicroelectronics)
  • 2N6284 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6284 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • 2N6284 - NPN Transistor (MA-COM)
  • 2N6284 - Silicon NPN Power Transistors (Savantic)
  • 2N6284 - (2N6282 - 2N6284) NPN Silicon Darlington Power Transistor (Comset Semiconductors)
  • 2N6284 - NPN Darlington Power Silicon Transistor (VPT)
  • 2N6284 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (Central Semiconductor)
  • 2N6284 - NPN Darlington Power Silicon Transistor (Aeroflex)
  • 2N6280 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=100V(Min) ·Complement to type 2N6287 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IB Base Current 0.
Published: |