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2N6036 - PNP Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = -80V(Min.) DC Current Gain : hFE = 750(Min) @ IC= -2A Complement to Type 2N6039 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-p

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·Complement to Type 2N6039 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -8 IB Base Current -0.
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