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IDT71024 - CMOS Static RAM

Download the IDT71024 datasheet PDF. This datasheet also covers the IDT71024S variant, as both devices belong to the same cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8.

It is fabricated using high-performance, high-reliability CMOS technology.

Features

  • 128K x 8 advanced high-speed CMOS static RAM.
  • Commercial (0°C to +70°C), Industrial (.
  • 40°C to +85°C).
  • Equal access and cycle times.
  • Commercial and Industrial: 12/15/20ns.
  • Two Chip Selects plus one Output Enable pin.
  • Bidirectional inputs and outputs directly TTL-compatible.
  • Low power consumption via chip deselect.
  • Available in 300 and 400 mil Plastic SOJ. Functional Block Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IDT71024S-IDT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IDT71024
Manufacturer IDT
File Size 218.70 KB
Description CMOS Static RAM
Datasheet download datasheet IDT71024 Datasheet

📁 Similar Datasheet

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Other Datasheets by IDT

Part Number Description
IDT71024S CMOS Static RAM
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IDT71256S CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CMOS Static RAM 1 Meg (128K x 8-Bit) IDT71024S Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0°C to +70°C), Industrial (–40°C to +85°C) ◆ Equal access and cycle times — Commercial and Industrial: 12/15/20ns ◆ Two Chip Selects plus one Output Enable pin ◆ Bidirectional inputs and outputs directly TTL-compatible ◆ Low power consumption via chip deselect ◆ Available in 300 and 400 mil Plastic SOJ. Functional Block Diagram Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
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