Datasheet Details
| Part number | H27UEG8YEA |
|---|---|
| Manufacturer | Hynix |
| File Size | 1.54 MB |
| Description | 256Gb (32768M x 8bit) NAND Flash |
| Datasheet |
 H27UEG8YEA-Hynix.pdf
|
| Part number | H27UEG8YEA |
|---|---|
| Manufacturer | Hynix |
| File Size | 1.54 MB |
| Description | 256Gb (32768M x 8bit) NAND Flash |
| Datasheet |
H27UEG8YEA-Hynix.pdf
|
of CE# 0.1 Change Endurance Change AC Timing Characteristics (tRC, tRP, tWC, tWP, tCLS, tCS, tALS, tDS, tREA, tADL) Update Read ID Table (3rd Byte) Change Bad Block Management Dec. Multilevel Cell technology Endurance - 3,000 P/E cycles (with 24 bit/ 1,024byte ECC) Supply Voltage Data Retent
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