HY5DU56422DT - (HY5DU56xx22DT) 256Mb DDR SDRAM

Hynix Semiconductor

Datasheet Details

Part number	HY5DU56422DT
Manufacturer	Hynix Semiconductor
File Size	268.63 KB
Description	(HY5DU56xx22DT) 256Mb DDR SDRAM
Datasheet	HY5DU56422DT_HynixSemiconductor.pdf

and is subject to change without notice.

ES VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +/- 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation.
All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 2/2.5 (DDR200, 266, 333) and 3 (DDR400) supported Programmable burst length 2/4/8 with both sequential and interleave mode Internal four bank operat.

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Published: Nov 7, 2006 |