HY5DU561822ELTP, HY5DU56822E - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Hynix Semiconductor

Datasheet Details

Part number	HY5DU561822ELTP, HY5DU56822E
Manufacturer	Hynix Semiconductor
File Size	292.14 KB
Description	(HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
Datasheet	HY5DU56822E_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY5DU561822ELTP, HY5DU56822E. Please refer to the document for exact specifications by model.

and is subject to change without notice.

VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data.

📁 HY5DU561822ELTP Similar Datasheet

Other Datasheets by Hynix Semiconductor

HY5DU561822ETP - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
HY5DU561622AT - (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU561622CF - (HY5DU56xxxC(L)F) 256M DDR SDRAM
HY5DU561622CT - (HY5DU56xx22CT) 256M-P DDR SDRAM
HY5DU561622DT - (HY5DU56xx22DT) 256Mb DDR SDRAM
HY5DU561622DTP - (HY5DU56x22DTP) 256M DDR SDRAM

Published: Mar 7, 2007 |