HY5DU12822DF, HY5DU121622DF - 512Mb DDR SDRAM

Hynix Semiconductor

Datasheet Details

Part number	HY5DU12822DF, HY5DU121622DF
Manufacturer	Hynix Semiconductor
File Size	496.16 KB
Description	512Mb DDR SDRAM
Datasheet	HY5DU121622DF_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY5DU12822DF, HY5DU121622DF. Please refer to the document for exact specifications by model.

and is subject to change without notice.

VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400, 400Mbps/pin product and 500Mbps/pin product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS.

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Published: Dec 21, 2010 |