Datasheet Specifications
- Part number
- HY5DU121622DTP
- Manufacturer
- Hynix Semiconductor
- File Size
- 271.52 KB
- Datasheet
- HY5DU121622DTP_HynixSemiconductor.pdf
- Description
- 512Mb DDR SDRAM
Description
512Mb DDR SDRAM HY5DU12822D(L)TP HY5DU121622D(L)TP This document is a general product .
Features
* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operatiApplications
* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strHY5DU121622DTP Distributors
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