HY27US16121M, HY27US08121M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Hynix Semiconductor

Description

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface.

📥 Download Datasheet

HY27US16121M Datasheet Preview — This datasheet PDF includes multiple part numbers: HY27US16121M, HY27US08121M. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY27US16121M, HY27US08121M
Manufacturer: Hynix Semiconductor
File Size: 796.67 KB
Datasheet: HY27US08121M_HynixSemiconductor.pdf
Description: (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Note: This datasheet PDF includes multiple part numbers: HY27US16121M, HY27US08121M.
Please refer to the document for exact specifications by model.

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www. DataSheet4U. com - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.3V device: VCC = 2.7 t

HY27US16121M Distributors

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📌 All Tags

HY27US08121M HY27xSxx121M 512Mbit 64Mx8bit 32Mx16bit NAND Flash Hynix Semiconductor

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