Datasheet Specifications
- Part number
- HY27UG084G2M
- Manufacturer
- Hynix Semiconductor
- File Size
- 468.31 KB
- Datasheet
- HY27UG084G2M_HynixSemiconductor.pdf
- Description
- (HY27UGxx Series) 2G-Bit NAND Flash
Description
w e e Document h Title S / 256Mx16bit) NAND Flash Memory 4Gbit (512Mx8bit a at .D History Revision w w Revision No.0.0 U 4 t .m o c Preliminary.Features
* 9) Change DC Characteristics (Table 8) - Operating Current ICC1 Typ Before 0.4 After 20 25 Max 40 45 ICC2 Typ 20 25 Max 40 45 ICC3 Typ 20 25 Max 40 45 Sep. 16. 2005 Preliminary 10) Change AC Characteristics - Errata is deleted. tWC Before After 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns - tR is changeApplications
* NAND INTERFACE - x8 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller AUTOMATICHY27UG084G2M Distributors
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