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H5TS5163MFR-NOC 512Mb DDR3 SDRAM

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Description

H5TQ(S)5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR * * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may con.
and is subject to change without notice.

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Applications

* which requires large memory density and high bandwidth. Hynix 512Mb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes

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