Datasheet Specifications
- Part number
- H55S2562JFR-60M
- Manufacturer
- Hynix Semiconductor
- File Size
- 751.58 KB
- Datasheet
- H55S2562JFR-60M_HynixSemiconductor.pdf
- Description
- 256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Description
www.DataSheet4U.com 256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organiz.
Features
* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During bApplications
* which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x16. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output dataH55S2562JFR-60M Distributors
📁 Related Datasheet
📌 All Tags