HX8205 Dual N-Channel Enhancement Mode Power MOSFET

Description

HX8205 Dual N-Channel Enhancement Mode Power MOSFET .
The HX8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HX8205
Manufacturer: Husintent
File Size: 544.83 KB
Datasheet: HX8205-Husintent.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 19.5V,ID = 4A RDS(ON)

HX8205 Distributors

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HX8205 Dual N-Channel Enhancement Mode Power MOSFET Husintent

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