CS150N03D8 Datasheet (Huajing) - Silicon N-Channel Power MOSFET

CS150N03D8, Silicon N-Channel Power MOSFET

CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 30 1

CS150N03D8 Features

* l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa