CS8N70FA9H2-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS8N70FA9H2-G Datasheet Preview — Preview of CS8N70FA9H2-G PDF

Datasheet Details

Part number	CS8N70FA9H2-G
Manufacturer	Huajing Microelectronics
File Size	241.66 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS8N70FA9H2-G-HuajingDiscreteDevices.pdf

CS8N70FA9H2-G Product details

Description

CS8N70F A9H2-G , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:35.9nC) l Low Reverse transfer capacitances(Typical:11.2pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |