CS6N70FA9D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N70FA9D Datasheet Preview — Preview of CS6N70FA9D PDF

Datasheet Details

Part number	CS6N70FA9D
Manufacturer	Huajing Microelectronics
File Size	232.81 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N70FA9D-HuajingMicroelectronics.pdf

CS6N70FA9D Product details

Description

CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for systemminiaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |