Datasheet Details
Part number:
CS6N70B3D1-G
Manufacturer:
Huajing Microelectronics
File Size:
230.72 KB
Description:
Silicon n-channel power mosfet.
CS6N70B3D1-G-HuajingMicroelectronics.pdf
Datasheet Details
Part number:
CS6N70B3D1-G
Manufacturer:
Huajing Microelectronics
File Size:
230.72 KB
Description:
Silicon n-channel power mosfet.
CS6N70B3D1-G, Silicon N-Channel Power MOSFET
CS6N70 B3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS6N70B3D1-G Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter
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