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CS640A0H - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS640A0H
Manufacturer Huajing Microelectronics
File Size 715.54 KB
Description Silicon N-Channel Power MOSFET
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Silicon N-Channel Power MOSFET CS640 A0H ○R General Description: CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications: CRT、TV/Monitor and Lighting.
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