CS5N65FA9H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS5N65FA9H
Manufacturer	Huajing Microelectronics
File Size	828.72 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS5N65FA9H-HuajingMicroelectronics.pdf

CS5N65FA9H Product details

Description

CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 650 5 32 1.6 enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |